Tags: LA5SE MOS-FET
| Quantity | 3+ units | 10+ units | 30+ units | 50+ units | More |
|---|---|---|---|---|---|
| Price /Unit | $127.23 | $124.64 | $120.74 | $115.55 | Contact US |
New Original NC400 High-end Audio Power Amplifier Module 580W Ultra-low Distortion Amplifier for HYPEX
$104.21
New Original NC500 Audio Power Amplifier Module Ultra-low Noise and Distortion Amplifier Board for HYPEX
$196.11
Secondhand U-PRO2S 280W+280W Digital Class D Power Amplifier Board Ultra-low Distortion PWM Modulator for PSCAL
$74.72
Features: For high-end headset design,such as HD600,HD650,HD800,DT880,T1,K601,K701,etc.
Parameters: Output power (1KHZ sine wave equivalent without distortion power):
- 300 mW/600 ohms,1200 mW/32 ohms
- Signal to noise ratio: >102dB.
- Output impedance: 47 ohms
- Voltage amplification gain: 19 times the high gain mode.
- Maximum output voltage swing: greater than plus or minus 13V (equivalent 26V).
- Input interface: RCA Lotus two-channel socket.
- Output interface: 6.35 headphone output.
- Average power consumption: AC220V <15W.
- Volume: 118x52x210mm
- Net weight: 2.2 kg
- Color: Black
